型号/品牌/封装
品类/描述
库存
价格(含税)
资料
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品类: 中高压MOS管描述: VISHAY SIHP33N60EF-GE3 场效应管, MOSFET, N沟道, 600V, 33A, TO-220AB-350145+¥24.733850+¥23.6768200+¥23.0849500+¥22.93691000+¥22.78892500+¥22.61985000+¥22.51417500+¥22.4084
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品类: 中高压MOS管描述: VISHAY SIHB24N65E-GE3 功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.12 ohm, 10 V, 2 V91745+¥21.595950+¥20.6730200+¥20.1561500+¥20.02691000+¥19.89772500+¥19.75015000+¥19.65787500+¥19.5655
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品类: 中高压MOS管描述: VISHAY SIHP33N60E-GE3 场效应管, MOSFET, N沟道, 600V, 33A, TO-220AB-318225+¥22.302550+¥21.3494200+¥20.8157500+¥20.68231000+¥20.54882500+¥20.39635000+¥20.30107500+¥20.2057
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品类: 中高压MOS管描述: VISHAY SIHF12N60E-E3 功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.32 ohm, 10 V, 2 V952310+¥8.1888100+¥7.7794500+¥7.50641000+¥7.49282000+¥7.43825000+¥7.36997500+¥7.315310000+¥7.2880
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品类: 中高压MOS管描述: VISHAY SIHB12N60E-GE3 场效应管, MOSFET, N沟道, 600V, 12A, TO-263-3788610+¥7.0980100+¥6.7431500+¥6.50651000+¥6.49472000+¥6.44745000+¥6.38827500+¥6.340910000+¥6.3172
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品类: 中高压MOS管描述: VISHAY SIHD7N60E-GE3 功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.5 ohm, 10 V, 2 V773110+¥11.2500100+¥10.6875500+¥10.31251000+¥10.29382000+¥10.21885000+¥10.12507500+¥10.050010000+¥10.0125
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品类: 中高压MOS管描述: VISHAY IRFPC60PBF 场效应管, MOSFET, N沟道47575+¥15.928450+¥15.2477200+¥14.8665500+¥14.77121000+¥14.67592500+¥14.56705000+¥14.49897500+¥14.4308
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品类: 中高压MOS管描述: VISHAY SIHP7N60E-GE3 功率场效应管, MOSFET, N沟道, 7 A, 600 V, 0.5 ohm, 10 V, 2 V833010+¥7.9944100+¥7.5947500+¥7.32821000+¥7.31492000+¥7.26165000+¥7.19507500+¥7.141710000+¥7.1150
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品类: 中高压MOS管描述: VISHAY IRFBC40SPBF 功率场效应管, MOSFET, N沟道, 6.2 A, 600 V, 1.2 ohm, 10 V, 4 V 新21215+¥14.195650+¥13.5890200+¥13.2492500+¥13.16431000+¥13.07942500+¥12.98235000+¥12.92167500+¥12.8610
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品类: 中高压MOS管描述: VISHAY SIHB33N60E-GE3 场效应管, MOSFET, N沟道, 600V, 33A, TO-263-322995+¥22.445350+¥21.4861200+¥20.9489500+¥20.81461000+¥20.68042500+¥20.52695000+¥20.43107500+¥20.3350
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品类: 中高压MOS管描述: VISHAY IRFPE50PBF 功率场效应管, MOSFET, N沟道, 7.8 A, 800 V, 1.2 ohm, 10 V, 4 V91645+¥14.401550+¥13.7861200+¥13.4414500+¥13.35531000+¥13.26912500+¥13.17065000+¥13.10917500+¥13.0475
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品类: 中高压MOS管描述: N 通道 MOSFET,600V 至 1000V,Vishay Semiconductor ### MOSFET 晶体管,Vishay Semiconductor46375+¥17.200250+¥16.4651200+¥16.0535500+¥15.95061000+¥15.84772500+¥15.73015000+¥15.65667500+¥15.5831
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品类: 中高压MOS管描述: VISHAY IRFPC50LCPBF 功率场效应管, MOSFET, N沟道, 13 A, 600 V, 600 mohm, 10 V, 2 V86415+¥21.483550+¥20.5654200+¥20.0513500+¥19.92281000+¥19.79422500+¥19.64735000+¥19.55557500+¥19.4637
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品类: 中高压MOS管描述: VISHAY IRFIBF30GPBF. 场效应管, MOSFET, N沟道488710+¥7.9284100+¥7.5320500+¥7.26771000+¥7.25452000+¥7.20165000+¥7.13567500+¥7.082710000+¥7.0563
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品类: 中高压MOS管描述: VISHAY IRFBC40APBF 功率场效应管, MOSFET, N沟道, 6.2 A, 600 V, 1.2 ohm, 10 V, 4 V65085+¥6.133125+¥5.678850+¥5.3607100+¥5.2245500+¥5.13362500+¥5.02005000+¥4.974610000+¥4.9064
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品类: 中高压MOS管描述: VISHAY IRFBC30PBF 场效应管, MOSFET, N沟道38455+¥4.509025+¥4.175050+¥3.9412100+¥3.8410500+¥3.77422500+¥3.69075000+¥3.657310000+¥3.6072
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品类: 中高压MOS管描述: 功率MOSFET Power MOSFET629210+¥11.7168100+¥11.1310500+¥10.74041000+¥10.72092000+¥10.64285000+¥10.54517500+¥10.467010000+¥10.4280
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品类: 中高压MOS管描述: VISHAY IRFB9N60APBF. 功率场效应管, MOSFET, N沟道, 9.2 A, 600 V, 750 mohm, 10 V, 4 V467910+¥7.7352100+¥7.3484500+¥7.09061000+¥7.07772000+¥7.02615000+¥6.96177500+¥6.910110000+¥6.8843
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品类: 中高压MOS管描述: VISHAY IRFIBF20GPBF 场效应管, MOSFET, N沟道237410+¥8.9604100+¥8.5124500+¥8.21371000+¥8.19882000+¥8.13905000+¥8.06447500+¥8.004610000+¥7.9748
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品类: 中高压MOS管描述: VISHAY SIHA12N60E-E3 功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.32 ohm, 10 V, 4 V552310+¥7.6920100+¥7.3074500+¥7.05101000+¥7.03822000+¥6.98695000+¥6.92287500+¥6.871510000+¥6.8459
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品类: 中高压MOS管描述: VISHAY SIHA15N60E-E3 场效应管, MOSFET, N沟道, 600V, 15A, TO-220F418210+¥10.4052100+¥9.8849500+¥9.53811000+¥9.52082000+¥9.45145000+¥9.36477500+¥9.295310000+¥9.2606
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品类: 中高压MOS管描述: VISHAY IRFPC50PBF 功率场效应管, MOSFET, N沟道, 11 A, 600 V, 600 mohm, 10 V, 4 V62845+¥12.218350+¥11.6962200+¥11.4038500+¥11.33071000+¥11.25762500+¥11.17405000+¥11.12187500+¥11.0696
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品类: 中高压MOS管描述: VISHAY SIHW33N60E-GE3 场效应管, MOSFET, N沟道, 600V, 33A, TO-247AD-323955+¥24.410950+¥23.3677200+¥22.7835500+¥22.63741000+¥22.49142500+¥22.32455000+¥22.22027500+¥22.1158
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品类: 中高压MOS管描述: VISHAY SIHP15N60E-GE3 功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.23 ohm, 10 V, 2 V933710+¥11.0424100+¥10.4903500+¥10.12221000+¥10.10382000+¥10.03025000+¥9.93827500+¥9.864510000+¥9.8277
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品类: 中高压MOS管描述: VISHAY SIHG33N60E-GE3 功率场效应管, MOSFET, N沟道, 33 A, 600 V, 0.083 ohm, 10 V, 2 V16435+¥29.631450+¥28.3651200+¥27.6560500+¥27.47871000+¥27.30142500+¥27.09885000+¥26.97227500+¥26.8456
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品类: 中高压MOS管描述: VISHAY SIHP22N60S-E3 Power MOSFET, N Channel, 22A, 600V, 160mohm, 10V, 2V75545+¥17.059850+¥16.3307200+¥15.9225500+¥15.82041000+¥15.71832500+¥15.60175000+¥15.52887500+¥15.4559
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品类: 中高压MOS管描述: N 通道 MOSFET,E 系列,低品质因数,Vishay Semiconductor Vishay E 系列 MOSFET 电源是高电压晶体管,具有超低最大接通电阻、低灵敏值和快速切换功能。 它们提供各种电流额定值。 典型应用包括服务器和电信电源、LED 照明、回扫转换器、功率因数校正 (PFC) 和开关模式电源 (SMPS)。 ### 特点 低灵敏值 (FOM) RDS(on) x Qg 低输入电容 (Ciss) 低接通电阻(RDS(接通)) 超低栅极电荷 (Qg) 快速切换 减少切换和传导损耗 ### MOSFET 晶体管,Vishay Semiconductor57115+¥21.199250+¥20.2933200+¥19.7859500+¥19.65911000+¥19.53232500+¥19.38735000+¥19.29677500+¥19.2061
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品类: 中高压MOS管描述: VISHAY IRFPG50PBF 功率场效应管, MOSFET, N沟道, 6 A, 1 kV, 2 ohm, 10 V, 4 V96875+¥15.799750+¥15.1245200+¥14.7464500+¥14.65181000+¥14.55732500+¥14.44935000+¥14.38187500+¥14.3142
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品类: 中高压MOS管描述: VISHAY SIHP24N65E-E3 功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.12 ohm, 10 V, 2 V58175+¥20.799150+¥19.9102200+¥19.4125500+¥19.28801000+¥19.16362500+¥19.02145000+¥18.93257500+¥18.8436